Method and apparatus for performing memory cell verification on a nonvolatile memory circuit

ABSTRACT

A method for verifying the status of selected nonvolatile memory cells of an integrated memory circuit, such as during a memory erase or programming operation, and an integrated nonvolatile memory circuit including circuitry for performing this verification method. Preferably, the invention employs simple logic circuitry including a flip-flop to assert successful verification data only in response to a continuous validity of a verification signal throughout a sampling period, thereby avoiding false assertion of successful verification data. The sampling period is preferably longer than the expected duration of fluctuations due to noise in the verification signal. During the sampling period of a verification operation, the logic circuitry receives a raw verification signal indicative of the instantaneous relation between a measured threshold voltage of a selected memory cell and a reference voltage. The raw verification signal is valid if the threshold voltage has a desired relation to the reference voltage at an instant of time. The flip-flop remains in a first state while the raw verification signal is valid, but enters a second state in response to the raw verification signal going invalid and remains in the second state for the rest of the sampling period. An output signal from the logic circuitry indicates the state of the flip-flop at the end of the sampling period. A level of the output signal indicating that the flip-flop is in the first state at the end of the sampling period is interpreted as successful verification data.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to integrated nonvolatile memory circuits(preferably, integrated flash memory circuits) which perform averification operation to verify the status of selected memory cellsduring each of one or more stages of a memory erase or programmingoperation, and to methods for performing such a verification operation.The nonvolatile memory circuit of the invention includes logic means forasserting successful verification data only in response to continuousvalidity of a verification signal during a sampling period of sufficientduration, thereby avoiding false assertion of successful verificationdata.

2. Description of Related Art

Throughout the specification, including in the claims, the term"connected" is used (in the context of an electronic component being"connected" to another electronic component) in a broad sense to denotethat the components are electrically or electromagnetically coupled withsufficient strength under the circumstances. It is not used in a narrowsense requiring that an electrically conducting element is physicallyconnected between the two components.

Nonvolatile memory chips (integrated circuits) are becoming increasinglycommercially important. A typical nonvolatile memory chip includes anarray of nonvolatile memory cells, each cell comprising a transistorhaving a floating gate capable of semipermanent charge storage. Thecurrent drawn by each cell depends on the amount of charge stored on thecorresponding floating gate. Thus, the charge stored on each floatinggate determines a data value that is stored "semipermanently" in thecorresponding cell.

One particularly useful type of nonvolatile memory chip includes anarray of flash memory cells, with each cell comprising a flash memorydevice (a transistor). The charge stored on the floating gate of eachflash memory device (and thus the data value stored by each cell) iserasable by appropriately changing the voltage applied to the gate andsource (in a well known manner).

FIG. 1 is a simplified block diagram of a conventional nonvolatilememory chip. Integrated circuit 3 of FIG. 1 includes at least one I/Opad 30 (for asserting output data to an external device or receivinginput data from an external device), input/output buffer circuit 10 forI/O pad 30, address buffers A0 through Ap for receiving memory addressbits from an external device, row decoder circuit (X address decoder)12, column multiplexer circuit (Y multiplexer) 14, and memory array 16(comprising columns of nonvolatile memory cells, such as column 16A).Each of address buffers A0 through Ap includes an address bit pad forreceiving (from an external device) a different one of address bitsignals X0 through Xn and Y0 through Ym.

I/O buffer circuit 10 includes a "write" branch and a "read" branch."The write branch comprises input buffer 18. The read branch comprisessense amplifier 19 and output buffer 20. Chip 3 executes a writeoperation by receiving data (to be written to memory array 16) from anexternal device at I/O pad 30, buffering the data in the write branch,and then writing the data to the appropriate memory cell. Chip 3 canalso be controlled to execute a read operation in which it amplifies andbuffers data (that has been read from array 16) in the read branch, andthen assert this data to I/O pad 30.

Although only one I/O pad (pad 30) is shown in FIG. 1, typicalimplementations of the FIG. 1 circuit include a plurality of I/O pads,and each I/O pad is buffered by an I/O buffer circuit similar oridentical to circuit 10. For example, one implementation of the FIG. 1circuit includes eight I/O pads, eight buffer circuits identical tocircuit 10, one line connected between the output of the output buffer20 of each buffer circuit and one of the I/O pads (so that eight databits can be read in parallel from buffers 20 to the pads), and one lineconnected between the input of the input buffer 18 of each buffercircuit and one of the I/O pads (so that eight data bits can be writtenin parallel from the pads to buffers 18). Each I/O pad (including I/Opad 30) typically has high impedance when the output buffer is notenabled.

Each of the cells (storage locations) of memory array circuit 16 isindexed by a row index (an "X" index determined by decoder circuit 12)and a column index (a "Y" index output determined by decoder circuit14). FIG. 2 is a simplified schematic diagram of two columns of cells ofmemory array 16 (with one column, e.g., the column on the right,corresponding to column 16A of FIG. 1). The column on the left side ofFIG. 2 comprises "n" memory cells, each cell implemented by one offloating-gate N-channel transistors N1, N3, . . . , Nn. The drain ofeach of transistors N1-Nn is connected to bitline 13, and the gate ofeach is connected to a different wordline (a different one of wordline 0through wordline n). The column on the right side of FIG. 2 alsocomprises "n" memory cells, each cell implemented by one offloating-gate N-channel transistors N2, N4, . . . , Nm. The drain ofeach of transistors N2-Nm is connected to bitline 15, and the gate ofeach is connected to a different wordline (a different one of wordline 0through wordline n). The source of each of transistors N1, N3, . . . ,Nn, and N2, N4, . . . , Nm is held at a source potential (which isusually ground potential for the chip during a read or programmingoperation).

In the case that each memory cell is a nonvolatile memory cell, each oftransistors N1, N3, . . . Nn, and N2, N4, . . . , Nm has a floating gatecapable of semipermanent charge storage. The current drawn by each cell(i.e., by each of transistors N1, N3, . . . , Nn, and N2, N4, . . . ,Nm) depends on the amount of charge stored on the corresponding floatinggate. Thus, the charge stored on each floating gate determines a datavalue that is stored "semipermanently" in the corresponding cell. Incases in which each of transistors N1, N3, . . . , Nn, N2, N4, . . . ,and Nm is a flash memory device (as indicated in FIG. 2 by the symbolemployed to denote each of transistors N1, N3, . . . , Nn, N2, N4, . . ., and Nm), the charge stored on the floating gate of each is erasable(and thus the data value stored by each cell is erasable) byappropriately changing the voltage applied to the gate and source (in awell known manner).

In response to address bits Y0-Ym, circuit 14 (of FIG. 1) determines acolumn address which selects one of the columns of memory cells of array16 (connecting the bitline of the selected column to Node 1 of FIG. 1),and in response to address bits X0-Xn, circuit 12 (of FIG. 1) determinesa row address which selects one cell in the selected column. Consider anexample in which the column address selects the column on the right sideof FIG. 2 (the column including bitline 15) and the row address selectsthe cell connected along wordline 0 (the cell comprising transistor N2).To read the data value stored in the selected cell, a signal (a currentsignal) indicative of such value is provided from the cell's drain (thedrain of transistor N2, in the example), through bitline 15 and circuit14, to node 1 of FIG. 1. To write a data value to the selected cell, asignal indicative of such value is provided to the cell's gate and drain(the gate and drain of transistor N2, in the example).

More specifically, the FIG. 1 circuit executes a write operation asfollows. Each of address buffers A0 through An asserts one of bits X0-Xnto decoder circuit 12, and each of address buffers An+1 through Apasserts one of bits Y0-Ym to multiplexer circuit 14. In response tothese address bits, circuit 14 determines a column address (whichselects one of the columns of memory cells of array 16, such as column16A), and circuit 12 determines a row address (which selects one cell inthe selected column). In response to a write command (which can besupplied from control unit 29, or other circuitry to be describedbelow), a signal (indicative of data) present at the output of inputbuffer 18 is asserted through circuit 14 to the cell of array 16determined by the row and column address (e.g., to the drain of suchcell). During such write operation, output buffer 20 may be disabled. Adata latch (not shown) is typically provided between input buffer 18 andI/O pad 30 for storing data (to be written to a memory cell) receivedfrom I/O pad 30. When the latched data is sent to input buffer 18, inputbuffer 18 produces a voltage at Node 1 which is applied to the selectedmemory cell. Input buffer 18 is typically implemented as a tri-statabledriver having an output which can be placed in a high impedance mode(and thus disabled) during a read operation. In some implementations,the functions of the latch and input buffer 18 are combined into asingle device.

The FIG. 1 circuit executes a read operation as follows. Each of addressbuffers A0 through An asserts one of bits X0-Xn to address decodercircuit 12, and each of address buffers An+1 through Ap asserts one ofbits Y0-Ym to address decoder circuit 14. In response to these addressbits, circuit 14 asserts a column address to memory array 16 (whichselects one of the columns of memory cells, such as column 16A), andcircuit 12 asserts a row address to memory array 16 (which selects onecell in the selected column). In response to a read command (suppliedfrom control unit 29, or from other circuitry to be described below), acurrent signal indicative of a data value stored in the cell of array 16(a "data signal") determined by the row and column address is suppliedfrom the drain of the selected cell through the bitline of the selectedcell and then through circuit 14 to sense amplifier 19. This data signalis processed in amplifier 19 (in a manner to be described below), andthe output of amplifier 19 is buffered in output buffer 20 and finallyasserted at I/O pad 30.

When reading a selected cell of array 16, if the cell is in an erasedstate, the cell will conduct a first current which is converted to afirst voltage in sense amplifier 19. If the cell is in a programmedstate, it will conduct a second current which is converted to a secondvoltage in sense amplifier 19. Sense amplifier 19 determines the stateof the cell (i.e., whether it is programmed or erased corresponding to abinary value of 1 or 0, respectively) by comparing the voltageindicative of the cell state to a reference voltage. The outcome of thiscomparison is an output which is either high or low (corresponding to adigital value of one or zero) which sense amplifier 19 sends to outputbuffer 20, which in turn asserts a corresponding data signal to I/O pad30 (from which it can accessed by an external device.

Nonvolatile memory chip 3 of FIG. 1 can also execute an erase operationin which all or selected ones of the cells of memory array 16 are erasedin response to a sequence of one or more commands (e.g., an "EraseSetup" command followed by an "Erase Confirm" command)), by discharginga quantity of charge stored on the floating gate of each cell.Typically, all cells of array 16 or large blocks of such cells areerased at the same or substantially the same time during an eraseoperation. Each erase operation comprises a sequence of steps, including"verification" steps for verifying that the cells have desired thresholdvoltages at each of one or more stages of the erase operation. Averification step is also typically performed during a cell programmingoperation (in which a cell is programmed to have a threshold voltagedifferent from the threshold voltage of an erased cell), to determinewhether the cell has been programmed to have the desired thresholdvoltage.

More specifically, if cells of memory array 16 of FIG. 1 are to beerased, an "Erase Setup" command and then an "Erase Confirm" command aresent from an external device to I/O pad 30. Where each such commandcomprises parallel bits, the different bits are sent in parallel to I/Opad 30 and to additional I/O pads identical to I/O pad 30. The commandis transferred from I/O pad 30 (or from I/O pad 30 and additional I/Opads) to input buffer 18 (or input buffer 18 and input buffers connectedto the other I/O pads), and then to control unit 29. Control unit 29,which typically includes command execution logic and a state machine,processes each command to generate instruction data, and supplies theinstruction data to circuit 14 and sense amplifier 19 (and to othercomponents of memory chip 3 of FIG. 1) to cause chip 3 to execute asequence of steps required for erasing the specified cells of array 16.These steps include verification steps (e.g., the verification stepdiscussed below with reference to FIG. 7) for verifying that the cellshave desired threshold voltages at each of one or more stages of theerase operation.

During each verification step, verification data (denoted as "RAW VERIFYOK" in FIG. 1) is output from AND gate 22 (in response to the output ofsense amplifier 19). This verification data can be fed back to controlunit 29. Typically, an external device polls output pads of chip 3 inorder to determine whether the erase operation has been completed andwhether the erase operation was successful.

A conventional memory erase operation is next described in greaterdetail with reference to FIG. 3. FIG. 3 is a block diagram of aconventional flash memory system 103 which is a variation on memory chip3 of FIG. 1 which performs essentially all the same functions as doeschip 3. The components of flash memory system 103 which correspond tocomponents of memory chip 3 of FIG. 1 are identified by the samereference numerals as in FIG. 1. Memory array 16 of system 103 consistsof flash memory cells arranged in rows and columns with there being atotal of 256K of eight bit words in the array. The individual cells (notdepicted) are addressed by eighteen address bits (A0-A17), with ninebits being used by X decoder circuit 12 to select the row of array 16 inwhich the target cell is located and the remaining nine bits being usedby Y decoder circuit 14A (of Y-multiplexer 14) to select the appropriatecolumn of array 16.

Internal state machine 120 of memory system 103 controls detailedoperations of system 103 such as the various individual steps necessaryfor carrying out programming, reading and erasing operations. Statemachine 120 thus functions to reduce the overhead required of theexternal processor (not depicted) typically used in association withsystem 103.

If memory array 16 is to be erased (typically, all or large blocks ofcells are erased at the same time), the processor must cause the OutputEnable OE pin to be inactive (high), and the Chip Enable CE and WriteEnable WE pins to be active (low). The processor can then issue an 8 bitcommand 20H (0010 0000) on data I/O pins DQ0-DQ7, typically called anErase Setup command (one of I/O pins DQ0-DQ7 corresponds to I/O pad 30of FIG. 1). This is followed by issuance of a second eight bit commandD0H (1101 0000), typically called an Erase Confirm command. Two separatecommands are used so as to minimize the possibility of an inadvertenterase operation.

The commands are transferred to data input buffer 122 (input buffer 18of FIG. 1 corresponds to a component of buffer 122 which receives onebit of each command) and the commands are then transferred to commandexecution logic unit 124. Logic unit 124 then instructs state machine120 to perform all of the numerous and well known steps for erasingarray 16. Once the erase sequence is completed, state machine 120updates an 8 bit status register 126, the contents of which aretransferred to data output buffer 128 which is connected to data I/Opins DQ0-DQ7 of the memory system (output buffer 18 of FIG. 1corresponds to a component of buffer 128 which receives one bit fromregister 126). The processor will periodically poll the data I/O pins toread the contents of status register 126 in order to determine whetherthe erase sequence has been completed and whether it has been completedsuccessfully.

FIGS. 4A and 4B are a flow chart showing a typical erase sequence as itis carried out by state machine 120. It should be noted that during anyerase operation, there is a possibility that one or more cells of array16 will become what is termed "overerased". The objective of the erasesequence is to erase all the cells of array 16 so that the thresholdvoltages are all within a specified voltage range. That range istypically a small positive voltage range such as +1.5 to +3.0 volts. Ifthe erased cells fall within this range, the cell to be read (the"selected" or "target") cell will produce a cell current in a readoperation. The presence of cell current flow indicates that the cell isin an erased state (logic "1") rather than a programmed state (logic"0"). Cell current is produced in an erased cell because the voltageapplied to the control gate of the cell, by way of the word line fromthe array connected to X decoder 12, will exceed the threshold voltageof the erased cell by a substantial amount. In addition, cells which arenot being read ("deselected" cells) are prevented from producing a cellcurrent even if such cells have been erased to a low threshold voltagestate. By way of example, for cells located in the same row as theselected cell, by definition, share the same word line as the selectedcell. However, the drains of the deselected cells will be floatingthereby preventing a cell current from being generated. Deselected cellsin the same column will not conduct cell current because the word linesof such deselected cells are typically grounded. Thus, the gate-sourcevoltage of these cells will be insufficient to turn on these deselectedcells even if they are in an erased state.

Once array 16 has been erased, the vast majority of its cells will havea proper erased threshold voltage. However, it is possible that a few(or even one) of the cells may have responded differently to the erasesequence and such cell(s) have become overerased. If a cell has beenovererased, the net charge on the floating gate will be positive. Theresult will be that the threshold voltage will be negative to someextent. Thus, when the word line connected to such overerased deselectedcell is grounded, the deselected cell will nevertheless conduct current.This current will interfere with the reading of the selected cellthereby preventing proper memory operation. A principal objective of theerase sequence of FIGS. 4A and 4B is to prevent the overerase conditionfrom occurring.

With reference again to the FIG. 4A and 4B flow chart, the erasesequence is initiated (step 28) by the issuance of the two above-notederase commands. Once the commands have been received by commandexecution logic 124 (shown in FIG. 3), state machine 120 will firstcause all cells of array 16 to be programmed. This is done so that allcells are in essentially the same condition when they are subsequentlyerased. This reduces the likelihood that one or more of the cells willbecome overerased since all of the cells will have an increased tendencyto respond to the subsequent erase sequence in the same manner. Then, asindicated by block 30, an address counter (component 118 of FIG. 3) isinitialized to the first address of the memory. Next, as indicated byblock 32, the voltages used for programming are set to the proper level(including by providing high voltage Vpp, e.g. equal to +12 volts, fromVpp switch 121 of FIG. 3 to status register 126, X and Y decoders 12 and14A, and other components of FIG. 3).

Once the voltages are set, an internal program pulse counter (notdepicted) is initialized as shown by block 34 of FIG. 4A. This counterwill keep track of the number of programming pulses that have beenapplied to the cells of the word (byte) being programmed. Next, aprogramming pulse is applied to the cells of the word located at thefirst address of the memory, as indicated by block 36. The pulse counteris then incremented (block 38) and a determination is made as to whethera predetermined maximum number of pulses have been applied to the cells(block 40). If that is the case, the cells are read to determine whetherthe cells have, in fact, been programmed (verification operation 42).This is accomplished using sense amplifiers and associated componentsrepresented by block 100 of FIG. 3.

If the cells are still not programmed at this point, there has been afailure since the maximum number of programming pulses has beenexceeded. Depending upon the particular memory, the sequence will beterminated or a record of the failed word will be made and the sequencecontinued. This information will then be transferred to status register126 (FIG. 3) so that it can be read by the processor. One potentialcause of such a failure is that the memory endurance may have beenexceeded. In other words, the memory has been cycled too many times.

Assuming that the maximum count has not been exceeded, the byte isverified as indicated by operation 44. If the byte has not beenprogrammed, a further programming pulse is applied (block 36) and thecounter is incremented (block 38). Assuming that the maximum count hasstill not been exceeded, the byte is again verified (operation 44). Thissequence will continue until the byte finally passes the verificationtest or until the pulse counter is at the maximum.

Assuming that the first byte is eventually successfully programmed, adetermination is made as to whether the last address of array 16 hasbeen programmed (step 46). If that is not the case, address counter 118(of FIG. 3) is incremented to the second address (block 48) and theinternal pulse counter reset (block 34). A first programming pulse isapplied to the byte of the second address (block 36) and the sequence isrepeated. This process will continue until all cells of array 16 haveeither been programmed or until a determination is made that there is aprogramming failure.

Assuming that all of the cells have been successfully programmed andverified, state machine 120 will continue the erase sequence by settingthe appropriate voltages used for erasing, including the initializationof the address counter 118 (block 49 of FIG. 4B) and the setup of theappropriate voltages for erasing, including voltage Vpp (block 50).

Next., an internal erase pulse counter is reset (block 52) and a singleerase pulse is applied to all of the cells of array 16 (or to the blockof the array being erased in the event that capability is provided). Thecells of array 16 will then be sequentially read (erase verificationstep 58) in order to determine whether all cells have been successfullyerased. Before step 58, the conditions necessary for erase verification,namely those for cell reading, are set up (block 56) and the first cellof array 16 is read.

A single erase pulse is almost never sufficient to accomplish an erasureso that the test (step 58) will almost always fail. The state of theerase pulse counter is then examined (step 60) and a determination ismade that the maximum count has not been exceeded. Accordingly, a seconderase pulse is applied to the entire array 16 (step 54) and the firstbyte is again tested (step 58).

Once the byte has received a sufficient number of erase pulses and haspassed the verification test (step 58), the address is incremented (step64) and the second byte is tested (steps 56 and 58) to determine whetherthe second byte has been successfully erased. Since the cells are notalways uniform, it is possible that the second byte has not been erasedeven though it has received the same number of erase pulses received bythe first byte. In that event, a further erase pulse is applied to theentire array 16 and the second byte is again tested for a proper erase.Note that the address is not reset at this point since it is notnecessary to retest those bytes that have already been erased. However,there is a possibility that those earlier erased bytes will becomeovererased, as will be explained.

Once it has been established that the second byte has been properlyerased, a determination is made as to whether the last address of array16 has been verified (step 62). If that is not the case, address counter118 is incremented (step 64) and the third byte is tested. Additionalerase pulses will be applied if necessary. The internal erase pulsecounter (step 60) will monitor the total number of erase pulses appliedin the erase sequence. If a maximum number has been exceeded, thesequence will be terminated and one of the bits of status register 126will be set to reflect that an erase error has occurred.

Assuming that the second byte of cells has been properly erased, theremaining bytes will be verified and any necessary additional erasepulses will be applied. Once the last address has been verified, theerase sequence is ended and status register 126 is updated to indicatethat the erase sequence has been successfully completed.

In order to achieve higher density, nonvolatile memory chipmanufacturers have been decreasing the size of elements of such chips(e.g., the size of each cell of a memory array implemented in eachchip). With memory array cells having submicron feature sizes, theslightest change in processing of one memory cell relative to anotherduring manufacture results in a big difference in the behavior of thecells with respect to each other.

Important advantages of a nonvolatile memory chip comprising an array offlash memory cells over a nonvolatile memory chip comprising an array ofEPROM memory cells include system program capability. Importantadvantages of a nonvolatile memory chip comprising an array of flashmemory cells over a nonvolatile memory chip comprising an EEPROM memorycell array include low cost. However, nonvolatile memory chipscomprising flash memory cell arrays (especially those manufactured withvery small element size) have been subject to problems (such as"overerasure" and "wild bits") due to cell-to-cell variations (occurringduring circuit manufacture) in the behavior of each flash memory cell.These problems, which can produce wide variations in the responses ofadjacent cells to the same gate (or drain) voltage, are especiallysevere during erase operations and programming operations, as can beunderstood from the following explanation.

Before a nonvolatile memory array can be erased, the cells of the arraymust be programmed (i.e., data must be written thereto in an appropriatemanner) to avoid erasing the cells into a very negative threshold anddisturbing subsequent reads of data from the cells. After such aprogramming cycle, it may be necessary to verify whether each bit (eachstored data value indicated by a cell) has the correct value (i.e.,whether each cell has been programmed sufficiently). Then, after anerase cycle (which itself follows a preliminary programming cycle),another verification operation ("reverification") is performed todetermine whether each cell has been sufficiently erased. Finally, aftersuch an erase cycle, an additional adjustment procedure is oftenexecuted to tighten the distribution of memory element thresholdvoltages (e.g., to correct for overerasing of any cell). After thelatter adjustment procedure (which can be very complicated) it isusually necessary to perform yet another verification operation to seewhether each bit still has the correct (erased) value. As explainedabove, memory cell programming operations (as well as erase operations)typically include verification steps.

Each such verification and reverification operation assumes that thereare variations in the characteristics of the various cells. Thus, eachverification and reverification operation includes the steps ofinterrogating each cell, evaluating the cell's margin after thepreceding process (e.g., programming, erasing, or adjustment), anddeciding whether the cell should be reprogrammed or further erased. Itis well known that the step of reading memory elements in a nonvolatilememory chip can be very noisy and difficult, even during a normal "read"memory access operation. However, it is even more difficult to read suchmemory elements during verification and reverification, since (inverification and reverification) the sense amplifier must perform in amuch tighter environment as far as noise and margin are concerned (sincethe voltage levels have much less margin than in a normal "read"operation, as explained below).

Specifically, the sense amplifier employed in normal reading as well asverification (e.g., sense amplifier 19 of FIG. 1) is typically adifferential amplifier that receives two signals: a signal from theselected cell (indicative of the cell's threshold voltage, V_(th)), anda reference signal equivalent to a reference threshold voltage, V_(ref).In a normal "read" operation, reference voltage V_(ref) is typically 4volts, and the measured threshold voltage V_(th) is typically 3 volts or5.5 volts (depending on whether the cell stores a "1" or a "0" bit).Thus, the sense amplifier operates with substantial noise margins duringa normal "read" operation.

During verification, however, the reference voltage V_(ref) is typically5.5 volts and an adequately programmed cell has a measured thresholdvoltage V_(th) greater than 5.5 volts. Since the two inputs of the senseamplifier (a differential amplifier) in this case are much closer toeach other than in a "normal" read operation, the sense amplifier'soutput is much more susceptible to error due to noise and the senseamplifier will respond much more slowly. Similarly, duringreverification (following an erase cycle), the reference voltage V_(ref)is typically 3 volts and an adequately erased cell has a measuredthreshold voltage V_(th) less than 3 volts. In this latter case, the twoinputs of the sense amplifier (differential amplifier) are also muchmore similar than in a "normal" read operation and the sense amplifier'soutput is much more susceptible to noise.

More specifically, a serious problem that often results from the effectsof noise on sense amplifier operation during conventional verification(or reverification) can be understood by considering the followingexample. During conventional verification (or reverification), the senseamplifier output is "Anded" with a verification enable signal. Forexample in FIG. 1, the output of sense amplifier 19 is supplied to oneinput of AND gate 22, verification enable signal "VERIFY ENABLE" issupplied to the other input of AND gate 22, and the AND gate 22 outputsthe signal "RAW VERIFY OK". The output of the AND gate (e.g., the signalRAW VERIFY OK) is asserted to a state machine (e.g., a state machinewithin control unit 29) to trigger execution of the next chip operation.The level of signal VERIFY ENABLE is a logical "1" only during eachverification and reverification cycle. Thus, if the sense amplifieroutput becomes valid (i.e., a logical "1") at any instant during averification or reverification operation, the signal RAW VERIFY OK is alogical "1" at a corresponding instant (and this instantaneous value ofRAW VERIFY OK can cause the state machine to trigger execution of theappropriate chip operation).

However, the described conventional circuitry is subject to seriouserrors if the cell being interrogated has been inadequately programmedor inadequately erased. For example, if the cell is inadequatelyprogrammed to have a measured threshold voltage V_(th) of only 5.3volts, while sense amplifier 19 is set to output a logical "1"(indicating adequate programming of a cell) when the cell's measuredthreshold voltage exceeds a reference voltage V_(ref) of 5.5 volts,small amounts of noise (e.g., noise on either input line of senseamplifier 19 due to fluctuations on a power supply line) can cause thesense amplifier output to oscillate between the correct logical level("0") and the incorrect logical level ("1"). If there happens to be asmall burst of noise at the end of the verification cycle for a selectedcell, the sense amplifier output at such instant is erroneously alogical "1", the signal RAW VERIFY OK at the output of AND gate 22 isalso erroneously a logical "1, " and the state machine erroneouslytriggers execution of an inappropriate chip operation (an operation thatwould be appropriate only if the cell being interrogated were properlyprogrammed, e.g., with a measured threshold voltage V_(th) exceeding thereference voltage V_(ref) =5.5 volts). The same undesired result(triggering of an inappropriate chip operation) can occur duringreverification of a cell (following an erase cycle intended to erase thecell) as a result of an erroneous value of RAW VERIFY OK which falselyindicates a proper (erased) state of the cell at the instant that thereverification cycle for the cell ends.

Until the present invention, nonvolatile memory verification andreverification operations (collectively referred to below as"verification" operations) had been subject to the described problem oferroneous results (erroneous values of output signal RAW VERIFY OK) dueto noise effects on sense amplifier operation. The present inventioneliminates this problem by treating the sense amplifier output asinvalid if, at any time during a sampling period (rather than merely atthe final instant of the sampling period), the threshold comparisonindicates insufficient programming or erasing of a cell.

SUMMARY OF THE INVENTION

The verification method of the invention is a method for verifying thestatus of a selected nonvolatile memory cell of an integrated memorycircuit (typically during a memory erase or programming operation).Another embodiment of the invention is an integrated nonvolatile memorycircuit including means for performing this verification method. Inpreferred embodiments, each memory cell of the inventive integratedcircuit is a flash memory cell.

The integrated circuit of the invention includes means for assertingsuccessful verification data only if a measured threshold voltage of thecell differs from a reference voltage by at least a selected marginduring a sampling period. In preferred embodiments, the integratedcircuit of the invention includes logic means for asserting successfulverification data only in response to continuous validity of averification signal throughout such a sampling period, thereby avoidingfalse assertion of successful verification data. The sampling period ispreferably longer than the expected duration of fluctuations (due tonoise) in the verification signal.

Preferably, the logic means is implemented as a simple logic circuitcomprising a flip-flop. During the verification operation, the logiccircuit receives a raw verification signal indicative of theinstantaneous relation between a measured threshold voltage of a memorycell and a reference voltage. The raw verification signal (which istypically the output of a sense amplifier gated through an AND gate) is"valid" if the threshold voltage has a desired relation to the referencevoltage at an instant of time (e.g., if the threshold voltage of aprogrammed cell exceeds the reference voltage at this instant). Theflip-flop remains in a first state as long as the raw verificationsignal is valid, but it enters a second state in response to theverification signal going "invalid" and remains in the second state forthe rest of the sampling period. An output signal from the logic circuitindicates the state of the flip-flop at the end of the sampling period.In preferred embodiments, a first level of the output signal (indicatingthat the flip-flop is in the first state at the end of the samplingperiod) is interpreted as "successful verification data" and a secondlevel of the output signal (indicating that the flip-flop is in thesecond state at the end of the sampling period) is interpreted as"unsuccessful verification data."

Preferably, a verification operation is performed in accordance with theinvention at each of two or more stages of a memory erase operation(e.g., once after a programming cycle, and again after an erase cycle),and at least once (for each cell being programmed) during a memoryprogramming operation. Each verification operation (for a selectedmemory cell) preferably has three portions: a setup cycle (in which asense amplifier is powered up and enters a mode in which it is capableof asserting a valid raw verification signal); a sampling cycle (inwhich the sense amplifier asserts a raw verification signal indicativeof the instantaneous relation between a measured threshold voltage ofthe cell and a reference voltage); and a hold cycle (in which the"successful" or "unsuccessful" verification data generated in accordancewith the invention stays valid for the next cycle of a state machinecontrolling the overall memory erase or programming operation).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is block diagram of a conventional memory circuit (implemented asan integrated circuit), including conventional means for verifying senseamplifier output.

FIG. 2 is a simplified schematic diagram of two columns of memory cellsof memory cell array 16 of FIG. 1.

FIG. 3 is a block diagram of a conventional flash memory system.

FIGS. 4A and 4B are a flow chart showing a typical memory erase sequencefor a conventional flash memory.

FIG. 5 is a block diagram of a memory circuit (implemented as anintegrated circuit) which embodies the present invention.

FIG. 6 is a schematic diagram of a preferred embodiment of logic means24 of FIG. 5.

FIG. 7 is a timing diagram of signals generated in operation of the FIG.5 circuit in accordance with the invention.

FIG. 8 is a flow chart of a data erase operation in accordance with theinvention, which can be performed by the FIG. 5 circuit.

DETAILED DESCRIPTION OF THE INVENTION

A first embodiment of the invention will be described with reference toFIGS. 5-7. This embodiment is a memory chip (identified by referencenumeral 3') which includes nonvolatile memory array 16, and means(including logic means 24) for performing the inventive method ofverifying the status of selected memory cells of array 16 during amemory erase operation.

Memory chip 3' of FIG. 5 is identical to conventional memory chip 3 ofFIG. 1 except in the following two respects: chip 3' includes logicmeans 24 (for generating an output signal "VERIFY OK" used in performingthe inventive verification method; and control unit 29 of chip 3' isprogrammed to cause chip 3' to perform the inventive verificationoperation (rather than a conventional verification operation). Onlylogic means 24 (and the verification operation performed by chip 3')will be described below, since the foregoing description of thoseelements of chip 3 (of FIG. 1) other than logic means 24 and theoperation of chip 3 (other than the inventive verification operation)applies equally well to chip 3', and no purpose would be served byrepeating it below. It is contemplated that in preferred embodiments ofthe invention, each nonvolatile memory cell in each memory array of thechip (e.g., each cell of nonvolatile array 16) is a flash memory cell.

Logic means 24 of chip 3' receives input signals "RAW VERIFY OK,""SAMPLE," and "VERIFY ENABLE," and generates in response the outputsignal "VERIFY OK."

To generate the verification signal "RAW VERIFY OK," AND gate 22receives both the output of sense amplifier 19 and the signal "VERIFYENABLE." Signal VERIFY ENABLE is supplied from control unit 29 to oneinput of AND gate 22 and to logic means 24. The level of signal VERIFYENABLE is a logical "1" only during a verification operation (which istypically performed as a stage of a memory erase or programmingprocedure). If the sense amplifier output becomes valid (i.e., indicatesa logical "1") at an instant during a verification operation, the signalRAW VERIFY OK is a logical "1" at a corresponding instant.

The output of sense amplifier 19 is indicative of the relation between ameasured threshold voltage of a selected memory cell of array 16 and areference voltage (the value of the reference voltage supplied to senseamplifier 19 is determined by control unit 29). Signal RAW VERIFY OK isthus a "verification" signal indicative of the instantaneous relationbetween the measured threshold voltage and the reference voltage duringa verification operation. Verification signal RAW VERIFY OK is "valid"if the threshold voltage has a desired relation to the reference voltage(e.g., if the selected cell has been programmed during a programmingcycle of the memory erase procedure or during a memory programmingprocedure, and the programmed cell's threshold voltage exceeds thereference voltage) at an instant of time during a verificationoperation.

The output signal "VERIFY OK" of means 24 is indicative of successfulverification data only in response to continuous validity ofverification signal RAW VERIFY OK during a "sampling period" determinedby the signal SAMPLE. Each sampling period is a (relatively short)portion of a verification operation. SAMPLE has a first logic level(i.e., a logical "1") only during a sampling period. Each samplingperiod is preferably much longer than the expected duration offluctuations (due to noise) in verification signal RAW VERIFY OK. Theconcept of the sampling period, and the sampling period's relation tothe overall verification operation will be described in more detailbelow with reference to the timing diagram of FIG. 7.

The VERIFY ENABLE signal is supplied to logic means 24 to reset thecircuit 24 before each verification operation. In the preferredembodiment of means 24 to be described with reference to FIG. 6, theVERIFY ENABLE signal resets a flip-flop within means 24.

Although logic means 24 can be implemented in a variety of ways(including in software or firmware), it is preferably implemented inhardware as a simple logic circuit such as that shown in FIG. 6. TheFIG. 6 embodiment of logic means 24 includes inverter N4 (whose inputreceives signal RAW VERIFY OK), NAND gate N3 (whose inputs receive theoutput of inverter N4 and signal SAMPLE), flip-flop circuit 60'(consisting of NAND gates N1 and N2 connected as shown), NAND gate N5(whose inputs receive the output of the flip-flop and signal VERIFYENABLE), and inverter N6 (whose input receives the output of N5 andwhose output asserts the signal VERIFY OK).

With reference to FIG. 7, we next describe the manner in which the FIG.6 embodiment of logic means 24 (as included within chip 3') implements averification operation in accordance with the invention. Such averification operation (during an erase operation) typicallysequentially verifies the status of all (or a selected subset of) thememory cells of array 16. Since a programming operation typicallyprograms only one memory cell (or a small block of cells) of array 16 ata time, each verification operation during a programming operationtypically verifies the status of such one cell (or small block ofcells). For simplicity, the following description is limited to thatportion of an overall verification operation that verifies the status ofa single one of the cells of array 16. It should be understood thatwhere several cells are to be verified, chip 3' simply repeats theverification procedure to be described for each cell to be verified. Itshould also be understood that chip 3' will typically perform an overallverification operation (sequentially verifying the status of all or manyof the cells of array 16) at least twice during a single memory eraseoperation (in a manner to be described later with reference to FIG. 8).

To implement a verification operation for a single cell of array 16,control unit 29 of chip 3' generates control signals for dividing thisverification operation into three stages: a verification setup cycle(performed from time t1 to time t2 as shown in FIG. 7); a sample cycle(performed, while signal SAMPLE has the logic level "1, " from time t2to time t4 as shown in FIG. 7); and a verification hold cycle (performedfrom time t4 to time t5 as shown in FIG. 7).

During the setup cycle, chip 3' causes sense amplifier 19 to power upand enter a mode in which it is capable of asserting a validverification signal. The setup cycle should be long enough so that itincludes a portion allowing for the settling time of sense amplifier 19with respect to a typical cell being erased or programmed with theproper margin.

During the sampling cycle, sense amplifier 19 asserts (to AND gate 22)an output signal indicative of the relation between a measured thresholdvoltage of the cell and a reference voltage, and signal VERIFY OK outputfrom logic means 24 (in response to RAW VERIFY OK output from AND gate22) is indicative of "successful" or "unsuccessful" verification data.During the hold cycle, signal VERIFY OK at the output of logic means 24remains valid for a time sufficiently long to enable it to be processedby control unit 29 (e.g., so that the state machine within control unit29 which controls an erase operation being performed by chip 3' hassufficient time to respond to signal VERIFY OK).

The level of signal VERIFY ENABLE is a logical "1" during an entireverification operation (including all of its setup, sampling, and holdcycles).

With reference to FIGS. 6 and 7, the VERIFY ENABLE signal is low beforetime t0, and then goes high at the start (time t1) of a verificationoperation. In response to its low level prior to time t0, the output offlip-flop 60' is reset to have a "high" value. This occurs since a lowvalue of VERIFY ENABLE causes the output of N2 to go high (at a timebefore the start of the verification operation so that SAMPLE is low andthe output of N3 is high and the output of N1 is low). Then, when VERIFYENABLE goes high (at the start of the verification period), the outputof N2 remains high and the output of N1 remains low.

The state of flip-flop 60' when the output of N2 is high is denotedherein as the "first" state. Prior to time t1 with VERIFICATION ENABLEbeing low, VERIFY OK is low. When VERIFY ENABLE goes high, and whenflip-flop 60' is in its first state, the signal VERIFY OK at the outputof N6 is "high." Thus, throughout an entire verification operation(throughout which VERIFY ENABLE remains high), the signal VERIFY OK is"high" while flip-flop 60' remains in the first state (since the twoinputs to N5 are high, the output of N5 is low, and the signal VERIFY OKoutput from N6 is high).

After flip-flop 60' has been reset, a verification operation commences(at time t1). Thereafter, the sample cycle of the verification operationcommences (at time t2, when control unit 29 causes SAMPLE to undergo alow-to-high level transition). During the sample cycle (while SAMPLEremains high), flip-flop 60' remains in its first state for as long assignal RAW VERIFY OK remains "high" (i.e., for as long as RAW VERIFY OKis "valid" which indicates that the measured threshold voltage, of thecell undergoing verification, has a desired relation to the referencevoltage being asserted to sense amplifier 19). Under these conditions,VERIFY OK remains high. This occurs because when RAW VERIFY OK is high(with SAMPLE high), the output of N4 is low and the output of N3 ishigh, so that the output of N2 will not change from the "high" value towhich it has been reset (so that the output of N5 remains low and VERIFYOK remains high). For example, the FIG. 6 circuit will remain in thisstate throughout the entire sample cycle if the cell undergoingverification has been adequately programmed during a programming cycle,so that the programmed cell's threshold voltage exceeds sense amplifier19's reference voltage by a sufficient margin so that RAW VERIFY OKremains continuously high (despite typical small fluctuations in thesignal levels processed in the relevant circuits due to noise or thelike).

If the cell undergoing verification has been inadequately programmed (orinadequately erased), such fluctuations will result in a low level or anoscillation in the level of RAW VERIFY OK as shown in FIG. 7.

If at any time during the sampling cycle, RAW VERIFY OK (for a cell thathas been inadequately programmed or inadequately erased) becomes"invalid" by falling to the correct logical level ("low"), flip-flop 60'will change to its "second" state (in which the output of N2 is low) andremain in the second state for the rest of the sampling cycle (andthereafter, until it is reset). Specifically, flip-flop 60' enters thesecond state under these conditions because the output of N4 goes high,and thus the output of N3 goes low, the output of N1 goes high, and theoutput of N2 thus goes low (and N2 remains low despite a subsequentlevel transitions of RAW VERIFY OK until flip-flop 60' is reset by a lowvalue on the VERIFY ENABLE line). Under these conditions (when flip-flop60' enters its "second" state), output signal VERIFY OK goes low (asindicated at time t3 in FIG. 7) and remains low for the rest of thesampling cycle (and the subsequent hold cycle from t4 to t5). Chip 3'(e.g., control unit 29) interprets this low level of VERIFY 0K(occurring at the end of the sample cycle and throughout the subsequenthold cycle) as "unsuccessful verification data" indicating that the cellbeing verified has not been adequately programmed (for example, in casethe verification operation follows the preliminary programming cycle ofan erase operation) or has not been adequately erased (in case theverification operation follows the erase cycle of an erase operation).

With reference to FIG. 8, we next describe a memory erase operationwhich embodies the invention, This method is implemented by chip 3' ofFIG. 5 (in an embodiment in which each cell of array 16 is a flashmemory device) under control of control unit 29. The erase operation ofFIG. 8 comprises a preliminary programming cycle (steps 51-61), an erasecycle (steps 63-71), and a final distribution adjustment cycle (steps73-79).

During the programming cycle, the cells to be erased are "programmed"(i.e., an appropriate charge is stored in the gate of each cell),principally to reduce the risk of subsequent overerasing of the cells(erasing the cells into a very negative threshold). During step 51, thecircuitry for applying the appropriate voltage (a high voltage) to oneof the cells is enabled. Then, during step 53, the cell is "programmed"by applying the appropriate voltage to its gate and drain.

Next, a verification operation in accordance with the invention isperformed to verify the status of the cell (during steps 55 and 57).Step 55 is the setup cycle of the verification operation (the cycle fromtime t1 to time t2 in FIG. 7), and step 57 includes the sample and holdcycles of the verification operation (the cycles from time t2 to time t5in FIG. 7).

If step 57 of the verification operation determines that the cell is notsatisfactorily programmed, steps 51, 53, 55, and 57 are repeated insequence (to reprogram the cell and verify whether the cell issatisfactorily programmed after such reprogramming).

If step 57 of the verification operation determines that the cell issatisfactorily programmed, program clean up step 59 is performed (toready chip 3' for erasing or programming of another cell). After step59, cell address incrementing step 61 is performed (to selected theaddress of the next cell to be programmed). If step 61 determines thatall cells have been programmed, then step 63 is executed, Otherwise,step 61 selects the next cell to be programmed and steps 51, 53, 55, and57 are repeated for this new cell.

At the start of the erase cycle (after the final iteration of step 61),all the cells have been programmed. Incrementing the address at thisstage resets the address counter to point to the beginning of the block.During the first step of the erase cycle (step 63), circuitry is enabledfor applying the appropriate voltage (a high voltage) to all of thecells. Then, during step 65, each cell is "erased" by applying theappropriate voltage to its source and gate.

Next, a verification operation in accordance with the invention isperformed to verify the status of the cell to which the address counterpoints (during steps 67 and 69). Step 67 is the setup cycle of theverification operation (the cycle from time t1 to time t2 in FIG. 7),and step 69 includes the sample and hold cycles of the verificationoperation (the cycles from time t2 to time t5 in FIG. 7).

If step 69 of the verification operation determines that the cell is notsatisfactorily erased, steps 63, 65, 67, and 69 are repeated in sequence(to re-trigger another high voltage cycle thereby re-erasing all thecells, and to verify whether the cell to which the address counterpoints is satisfactorily erased after such re-erasing).

If step 69 of the verification operation determines that the cell towhich the address counter points is satisfactorily erased, cell addressincrementing step 71 is performed (to select the address of the nextcell to be verified). If step 71 determines that all cells have beenerased, then step 73 is executed. Otherwise, step 71 selects the addressof the next cell to be verified and steps 67 and 69 are repeated forthis new cell.

After the final iteration of step 71, the chip performs the distributionadjustment cycle (steps 73-79). The purpose of this cycle is to tightenthe distribution of memory cell threshold voltages (e.g., to correct forovererasing of any cell during the erase cycle. During step 73, thecircuitry for applying the appropriate voltage (a high voltage) to allthe cells is enabled. Then, during step 75, the cells are simultaneously(or substantially simultaneously) adjusted by applying the appropriatevoltage to their gates. Then, yet another verification operation inaccordance with the invention is performed to verify the status of allthe cells (during steps 77 and 79), to determine whether each cell isstill satisfactorily erased. Step 77 is the setup cycle of theverification operation (the cycle from time t1 to time t2 in FIG. 7),and step 79 includes the sample and hold cycles of the verificationoperation (the cycles from time t2 to time t5 in FIG. 7, performed witha sufficient number of iterations to verify the status of all thecells).

After step 79, the chip (e.g., control unit 29 of the chip) asserts dataindicating the result of the final verification operation (e.g., to anoutput pad such as pad 30 which can be accessed by an external device),and asserts a control signal ("Erase Done") indicating that the overallerase operation has been completed.

Preferred embodiments of the invention have been described withreference to FIGS. 5-8. Although these embodiments have been describedin some detail, it is contemplated that changes from any of theseembodiments can be made without departing from the spirit and scope ofthe invention as defined by the appended claims.

What is claimed is:
 1. An integrated nonvolatile memory circuit,including:an array of nonvolatile memory cells; selection means forconnecting a selected one of the cells to a first node; first meansconnected to the first node for generating a raw verification signalindicative of an instantaneous relation between a measured thresholdvoltage of the selected one of the memory cells and a reference voltage,said raw verification signal being valid if the threshold voltage has adesired relation to the reference voltage at an instant of time; andsecond means for processing the raw verification signal to generate averification signal indicative of whether the threshold voltage differsfrom the reference voltage by at least a selected margin during asampling period.
 2. The memory circuit of claim 1, wherein theverification signal is indicative of whether the raw verification signalremains valid continuously during the sampling period.
 3. The memorycircuit of claim 2, wherein the sampling period is longer than anexpected duration of fluctuations due to noise in the raw verificationsignal.
 4. The memory circuit of claim 2, wherein the first meansincludes:a sense amplifier having an input terminal connected to thefirst node and an output terminal which asserts the raw verificationsignal.
 5. The memory circuit of claim 4, also including:logic means forreceiving the raw verification signal from the sense amplifier andasserting said raw verification signal to the second means during averification operation including said sampling period.
 6. The memorycircuit of claim 2, wherein the second means includes:a flip-flopcircuit which undergoes a transition from a first state to a secondstate in response to the raw verification signal going invalid duringthe sampling period, wherein the verification signal is indicative ofwhether the flip-flop circuit is in the first state or the second stateat the end of the sampling period; logic means for receiving the rawverification signal and asserting said raw verification signal to theflip-flop only during the sampling period; and means for setting theflip-flop to the first state before the sampling period.
 7. The memorycircuit of claim 1, wherein the nonvolatile memory cells are flashmemory cells.
 8. An integrated nonvolatile memory circuit, capable ofexecuting a verification operation including a setup period, a samplingperiod which follows the setup period, and a hold period which followsthe sampling period, said memory circuit including:an array ofnonvolatile memory cells; selection means for connecting a selected oneof the cells to a first node; first means connected to the first nodefor generating a raw verification signal indicative of an instantaneousrelation between a measured threshold voltage of the selected one of thememory cells and a reference voltage, said raw verification signal beingvalid if the threshold voltage has a desired relation to the referencevoltage at an instant of time; second means for processing the rawverification signal to generate a verification signal indicative ofwhether the threshold voltage differs from the reference voltage by atleast a selected margin during the sampling period; and control meansfor controlling execution of the verification operation.
 9. The memorycircuit of claim 8, wherein the verification signal is indicative ofwhether the raw verification signal remains valid continuously duringthe sampling period.
 10. The memory circuit of claim 9, wherein thesampling period is longer than an expected duration of fluctuations dueto noise in the raw verification signal.
 11. The memory circuit of claim9, wherein the first means includes:a sense amplifier having an inputterminal connected to the first node and an output terminal whichasserts the raw verification signal.
 12. The memory circuit of claim 9,wherein the second means includes:a flip-flop circuit which undergoes atransition from a first state to a second state in response to the rawverification signal going invalid during the sampling period, whereinthe verification signal is indicative of whether the flip-flop circuitis in the first state or the second state at the end of the samplingperiod; logic means for receiving the raw verification signal andasserting said raw verification signal to the flip-flop during thesampling period; and means for setting the flip-flop to the first statebefore the sampling period.
 13. The memory circuit of claim 8, whereinthe control means includes means for enabling the first means during thesetup period, and means for receiving and processing the verificationsignal during the hold period.
 14. The memory circuit of claim 8,wherein the nonvolatile memory cells are flash memory cells.
 15. Averification method for verifying status of a selected memory cell of anonvolatile memory integrated circuit, including the steps of:(a)receiving a raw verification signal indicative of an instantaneousrelation between a measured threshold voltage of the memory cell and areference voltage, where the raw verification signal is valid if thethreshold voltage has a desired relation to the reference voltage at aninstant of time; and (b) processing the raw verification signal togenerate a verification signal indicative of whether the thresholdvoltage differs from the reference voltage by at least a selected marginduring a sampling period.
 16. The method of claim 15, wherein theverification signal is indicative of whether the raw verification signalremains valid continuously during the sampling period.
 17. The method ofclaim 16, wherein the sampling period is longer than an expectedduration of fluctuations due to noise in the raw verification signal.18. The method of claim 16, wherein step (a) includes the step ofprocessing a first signal indicative of the measured threshold voltageof the memory cell and a second signal indicative of the referencevoltage in a sense amplifier to generate said raw verification signal.19. The method of claim 18, also including the steps of:(c) before step(a), executing a verification setup operation in which the senseamplifier is enabled; and (d) after step (b), executing a verificationhold operation in which the verification signal is held at least duringa cycle of a state machine controlling an overall memory operation. 20.The method of claim 19, wherein the verification setup operation hassufficient duration so that it includes a portion allowing for settlingtime of the sense amplifier with respect to the memory cell whose statusis being verified.
 21. The method of claim 16, wherein step (b) includesthe steps of:setting a flip-flop to a first state before the samplingperiod; asserting the raw verification signal to the flip-flop duringthe sampling period, to cause the flip-flop to enter a second state andremain in said second state in response to the raw verification signalgoing invalid during the sampling period, wherein the verificationsignal is indicative of whether the flip-flop is in the first state orthe second state at the end of the sampling period.
 22. A method forerasing at least some memory cells of a nonvolatile memory integratedcircuit, including the steps of:(a) programming the memory cells to afirst desired threshold voltage; (b) after step (a), verifying status ofthe memory cells; (c) after step (b), erasing the memory cells to asecond desired threshold voltage; and (d) after step (c), verifyingstatus of the memory cells,wherein each of steps (b) and (d) includesthe steps of: (e) receiving a raw verification signal indicative of aninstantaneous relation between a measured threshold voltage of one ofthe memory cells and a reference voltage, where the raw verificationsignal is valid if the threshold voltage has a desired relation to thereference voltage at an instant of time; and (f) processing the rawverification signal to generate a verification signal indicative ofwhether the threshold voltage differs from the reference voltage by asufficient margin during a sampling period.
 23. The method of claim 22,wherein the verification signal is indicative of whether the rawverification signal remains valid continuously during the samplingperiod.
 24. The method of claim 23, wherein the sampling period islonger than an expected duration of fluctuations due to noise in the rawverification signal.
 25. The method of claim 23, wherein step (e)includes the step of processing a first signal indicative of themeasured threshold voltage of the memory cell and a second signalindicative of the reference voltage in a sense amplifier to generatesaid raw verification signal.
 26. The method of claim 23, wherein step(b) includes the steps of:(g) after step (f), executing a hold operationin which the verification signal is received and processed in a controlmeans; and (h) repeating step (a) if the control means determines as aresult of step (g) that at least one of the memory cells is inadequatelyprogrammed.
 27. The method of claim 23, wherein step (d) includes thesteps of:(g) after step (f), executing a hold operation in which theverification signal is received and processed in a control means; and(h) repeating step (c) if the control means determines during step (g)that at least one of the memory cells is inadequately erased.
 28. Amethod for programming at least one memory cell of a nonvolatile memoryintegrated circuit, including the steps of:(a) programming the memorycell to a first desired threshold voltage; and (b) after step (a),verifying status of the memory cell, wherein step (b) includes the stepsof: (c) receiving a raw verification signal indicative of aninstantaneous relation between a measured threshold voltage of thememory cell and a reference voltage, where the raw verification signalis valid if the threshold voltage has a desired relation to thereference voltage at an instant of time; and (d) processing the rawverification signal to generate a verification signal indicative ofwhether the threshold voltage differs from the reference voltage by asufficient margin during a sampling period.
 29. The method of claim 28,wherein the sampling period is longer than an expected duration offluctuations due to noise in the raw verification signal.